Catálogo Bibliográfico
LDR | ·····cam##22·····#a#4500 |
001 | 000132 |
005 | 20100907144538.0 |
008 | 810417s19831983wb#a#####b####001#0#eng## |
245 | 10 | $a Point defects in semiconductors / $c M. Lannoo, J. Bourgoin. |
260 | ## | $a Berlin : $b Springer, $c 1983. |
300 | ## | $b il. ; $c 24 cm. |
504 | ## | $a Incluye referencias bibliográficas e índice. |
505 | 0# | $a v. 2. Experimental aspects. |
490 | 0# | $a Springer series in solid-state sciences ; $v 22, 35 |
020 | ## | $a 0387115153 (U.S. : v. 2) |
100 | 1# | $a Lannoo, M. $q (Michel), $d 1942- |
700 | 1# | $a Bourgoin, J. $q (Jacques), $d 1938- |
080 | ## | $a 537.3 |
650 | #0 | $a Semiconductors $x Defects. |
650 | #0 | $a Point defects. |
650 | #7 | $a Dispositivos semiconductores. $2 inist |
650 | #7 | $a Defectos puntuales. $2 inist |
040 | ## | $a DLC $c DLC $d DLC $b spa $d arbccab |
500 | ## | $a Vol. 2 by J. Bourgoin, M. Lannoo, with a foreword by G.D. Watkins. |